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PDF 2N4124 Data sheet ( Hoja de datos )
| Número de pieza | 2N4124 | |
| Descripción | General Purpose Transistors(NPN Silicon) | |
| Fabricantes | ON Semiconductor | |
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2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Symbol
2N4123
2N4124
VCEO
Value
30
25
Unit
Vdc
Collector−Base Voltage
2N4123
2N4124
VCBO
40
30
Vdc
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
412x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
2N4123RLRM TO−92 2000 / Tape & Ammo
2N4124G
TO−92
5000 Units / Bulk
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N4123/D
1 page  
1.0
0.8
0.6
0.4
0.2
0
0.01
IC = 1 mA
2N4123, 2N4124
10 mA
30 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.2
TJ = 25°C
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 1 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0
5.0 10 20
50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 11. “On” Voltages
1.0
0.5
qVC for VCE(sat)
0
−0.5
−1.0
−1.5 qVB for VBE(sat)
+25°C to +125°C
−55°C to +25°C
−55°C to +25°C
+25°C to +125°C
−2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N4124.PDF ] | |
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