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PDF NCN5150 Data sheet ( Hoja de datos )
| Número de pieza | NCN5150 | |
| Descripción | Wired M-BUS Slave Transceiver | |
| Fabricantes | ON Semiconductor | |
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NCN5150
Wired M-BUS Slave
Transceiver
Description
The NCN5150 is a single-chip integrated slave transceiver for use in
two-wire Meter Bus (M-BUS) slave devices and repeaters. The
transceiver provides all of the functions needed to satisfy the
European Standards EN 13757−2 and EN 1434−3 describing the
physical layer requirements for M-BUS. It includes a programmable
power level of up to 2 (SOIC version) or 6 (NQFP version) unit loads,
which are available for use in external circuits through a 3.3 V LDO
regulator.
The NCN5150 can provide communication up to the maximum
M-BUS communication speed of 38,400 baud (half-duplex).
Features
• Single-chip MBUS Transceiver
• UART Communication Speeds Up to 38,400 baud
• Integrated 3.3 V VDD LDO Regulator with Extended Peak Current
Capability of 15 mA
• Supports Powering Slave Device from the Bus or from External
Power Supply
• Adjustable I/O Levels
• Adjustable Constant Current Sink up to 2 or 6 Unit Loads Depending
on the Package
• Low Bus Voltage Operation
• Extended Current Budget for External Circuits: at least 0.88 mA
• Polarity Independent
• Power-Fail Function
• Fast Startup − No External Transistor Required on STC Pin
• Industrial Ambient Temperature Range of −40°C to +85°C
• Available in:
♦ 16-pin SOIC (Pin-to-Pin Compatible with TSS721A)
♦ 20-pin QFN
• These are Pb-free Devices
Typical Applications
• Multi-energy Utility Meters
♦ Water
♦ Gas
♦ Electricity
♦ Heating systems
Related Standards − European Standard
EN 13757−2, EN 1434−3
For more information visit www.m-bus.com
www.onsemi.com
NQFP−20
MN SUFFIX
CASE 485E
SOIC−16
D SUFFIX
CASE 751B
MARKING DIAGRAMS
20
1
NCN
5150
ALYW
G
NQFP−20
16
NCN5150
ALYYWWG
1
SOIC−16
A = Assembly Location
L = Wafer Lot (optional)
Y, YY = Year
W, WW = Work Week
G or G = Pb-free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 3
1
Publication Order Number:
NCN5150/D
1 page  
NCN5150
Table 6. VDD REGULATOR ELECTRICAL CHARACTERISTICS (Note 10)
Symbol
Parameter
VDD
IDD
IDD, OFF
VPOR, ON
VPOR, OFF
VSTC, VDD ON
Voltage on VDD (Note 11 ) (IDD < 15 mA)
Peak Current that can be Supplied by VDD (Note 12)
VBUS = 0 V, VSTC = 0 V
Power-on Reset Threshold, Release
Power-on Reset Threshold, Reset
Threshold Voltage on Pin STC to Turn On VDD Regulator, Pull
the VS Pin High and Enable the PF Function
VSTC, VDD OFF Threshold Voltage on Pin STC to Turn Off VDD Regulator and
Pull the PFb and VS Pins Low
10. All voltages are referenced to GND.
11. Including output resistance of VDD.
12. Average current draw limited by ISTC.
Min
3.1
15
−0.5
2.65
2.55
5.6
3.7
Table 7. RECEIVER ELECTRICAL CHARACTERISTICS (Note 13)
Symbol
Parameter
VT Receiver Threshold Voltage
VSC
ISC, charge
ISC, discharge
Mark Level Storage Capacitor Voltage
Mark Level Storage Capacitor Charge Current
Mark Level Storage Capacitor Discharge Current
Min
VSC − 8.2
−
−40
0.3
Typ
3.3
−
−
2.85
2.75
6.0
4.0
Typ
−
−
−25
0.6
CDR
Charge/Discharge Current Ratio
VTX, OH,
VTXI, OH
TX/TXI High-level Voltage (ITX/ITXI = −100 mA) (Note 14)
VTX, OL,
VTXI, OL
TX/TXI Low-level Voltage
(ITX/ITXI = 100 mA)
(ITX = 1.1 mA)
ITX, ITXI
VTX = 7.5 V, VSTC = 6 V
13. All voltages are referenced to GND.
14. VSTC must be at least 1 V higher than VIO for proper operation.
30
VIO − 0.6
0
0
0
Table 8. TRANSMITTER ELECTRICAL CHARACTERISTICS (Note 15)
Symbol
Parameter
IMC Space Level Modulating Current (RRIS = 100 W (Note 16))
VRIS
Voltage on RIS Pin
VRX, IH, VRXI, IH RX/RXI Input High
VRX, IL, VRXI, IL RX/RXI Input Low
IRX, IRXI
Current Drawn or Sourced from RX/RXI Pins (Note 17)
(VIO = 3 V)
15. All voltages are referenced to GND.
16. Resistor with 1% accuracy.
17. Including internal pull-up resistor on RX and internal pull-down resistor on RXI.
Min
12.5
1.2
VIO − 0.8
0
±6
40
−
−
−
−
Typ
15.0
1.4
−
−
−
Max
3.6
−
0.5
3.15
3.00
6.4
4.3
Max
VSC − 5.7
VB
−15
−0.033 ×
ISC, charge
−
VIO
0.35
1.5
16
Max
18.0
1.6
5.5
0.8
±30
Unit
V
mA
mA
V
V
V
V
Unit
V
V
mA
mA
V
V
V
mA
Unit
mA
V
V
V
mA
www.onsemi.com
5
5 Page 
NCN5150
PACKAGE DIMENSIONS
QFN20, 4x4, 0.5P
CASE 485E
ISSUE B
D
ÉÉÉPIN ONE
REFERENCE
ÉÉÉÉÉÉ2X
0.15 C
2X
0.15 C
TOP VIEW
A
B
E
ÇÉÇÉ ÉÉÇÉÉÇEXPOSED Cu MOLD CMPD
A3
A1
DETAIL B
OPTIONAL CONSTRUCTIONS
LL
0.10 C
0.08 C
DETAIL B (A3)
A1
SIDE VIEW
A L1
C
SEATING
PLANE
DETAIL A
OPTIONAL CONSTRUCTIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30 MM
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
MILLIMETERS
DIM MIN MAX
A 0.80 1.00
A1 --- 0.05
A3 0.20 REF
b 0.20 0.30
D 4.00 BSC
D2 2.60 2.90
E 4.00 BSC
E2 2.60 2.90
e 0.50 BSC
K 0.20 REF
L 0.35 0.45
L1 0.00 0.15
DETAIL A D2
6
1
0.10 C A B
20X L
11
E2
0.10 C A B
SOLDERING FOOTPRINT*
4.30
20X
0.58
2.88
1
K 20
e
20X b
0.10 C A B
BOTTOM VIEW
0.05 C NOTE 3
PKG
OUTLINE
20X
0.35
2.88 4.30
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NCN5150.PDF ] | |
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