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PDF IRLHS6342PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLHS6342PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
±12
15.5
11
12i
V
V
mΩ
nC
A
Applications
• Charge and discharge switch for battery application
• System/Load Switch
PD - 96339A
IRLHS6342PbF
TOP VIEW
HEXFET® Power MOSFET
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low RDSon (≤ 15.5mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHS6342TRPBF
IRLHS6342TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom)= 70°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
30
±12
8.7
6.9
19hi
15hi
12i
76
2.1
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet 0ht2tp/:2//5w/w1w1.datasheet4u.com/
1 page  
30
ID = 8.5A
25
20
TJ = 125°C
15
10
TJ = 25°C
5
0 2 4 6 8 10 12 14
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
60
ID
50 TOP 1.9A
3.4A
BOTTOM 8.5A
40
30
20
10
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRLHS6342PbF
30
28
26
24
22
20
18 Vgs = 2.5V
16
14
12 Vgs = 4.5V
10
5
15 25 35 45 55 65 75
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
600
500
400
300
200
100
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 15. Typical Power vs. Time
D.U.T
+
-
RG
www.irf.com
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLHS6342PBF.PDF ] | |
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