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Número de pieza | IRLHS2242PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRLHS2242PBF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! VDS
VGS max
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
-20
±12
31
53
9.6
i-8.5
V
V
mΩ
mΩ
nC
A
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
PD - 96360
IRLHS2242PbF
HEXFET® Power MOSFET
T OP VIEW
D1
D2
G3
6D
D 5D
S 4S
D
D
DG
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Benefits
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHS2242TRPBF
IRLHS2242TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V (Wirebond Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-20
±12
-7.2
-5.8
-15hi
-9.8hi
i-8.5
-34
2.1
9.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
www.irf.com
1
03/18/11
Free Datasheet http://www.datasheet4u.com/
1 page 70
60 ID = -8.5A
50
40
TJ = 125°C
30
20 TJ = 25°C
10
0 2 4 6 8 10 12
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
VDS
L
RG
--V2G0SV
tp
D.U.T
IAS
0.01Ω
DRIVER
VDD
A
15V
Fig 14a. Unclamped Inductive Test Circuit
IRLHS2242TR/TR2PbF
80
70
ID
TOP -2.2A
-4.3A
60 BOTTOM -8.5A
50
40
30
20
10
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 13. Maximum Avalanche Energy vs. Drain Current
IAS
tp
V(BR)DSS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
-
+ VDD
VGS
10%
td(on) tr
90%
VDS
td(off) tf
Fig 15a. Switching Time Test Circuit
www.irf.com
Fig 15b. Switching Time Waveforms
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRLHS2242PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLHS2242PBF | Power MOSFET ( Transistor ) | International Rectifier |
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