DataSheetWiki


2N3957 fiches techniques PDF

ETC - N-Channel Dual Silicon Junction Field-Effect Transistor

Numéro de référence 2N3957
Description N-Channel Dual Silicon Junction Field-Effect Transistor
Fabricant ETC 
Logo ETC 





1 Page

No Preview Available !





2N3957 fiche technique
B-6
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
01/99
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Total Device Power Dissipation (each side)
@ 85°C Case Temperature (both sides)
Power Derating (both sides)
– 50 V
50 mA
250 mW
500 mW
4.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Voltage
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Output Conductance
Common Source Input Capacitance
Drain Gate Capacitance
Common Source
Reverse Transfer Capacitance
V(BR)GSS
IGSS
IG
VGS
VGS(OFF)
VGS(F)
IDSS
2N3957 2N3958
Min Max Min Max Unit
– 50 – 50
V
– 100
– 100 pA
– 500
– 500 nA
– 50 – 50 pA
– 250
– 250 nA
– 4.2 – 4.2 V
– 0.5 – 4 – 0.5 – 4 V
– 1 – 4.5 – 1 – 4.5 V
2 2V
0.5 5 0.5 5 mA
1000 3000 1000 3000 µS
gfs 1000 1000 µS
gos 35 35 µS
Ciss 4 4 pF
Cdgo 1.5 1.5 pF
Crss 1.2 1.2 pF
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Differential Gate Source
Voltage with Temperature
Transconductance Ratio
NF 0.5 0.5 dB
| IG1 – IG2 |
IDSS1 / IDSS2 0.9
| VGS1 – VGS2 |
VGS1– VGS2
T
10 10
1 0.85 1
20 25
68
7.5 10
nA
mV
mV
mV
gfs1 / gfs2 0.9 1 0.85 1
Process NJ16
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 30V, VDS = ØV
VGS = – 30V, VDS = ØV
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 50 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 1 nA
VDS = Ø, IG = 1 mA
VDS = 20V, VGS = ØV
TA = 125°C
TA = 125°C
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
VDS = 10V, IS = ØA
VDS = 20V, VGS = ØV
VDS = 20V, VGS = ØV
RG = 10 M
VDS = 20V, ID = 200 µA
VDS = 20V, VGS = ØV
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
VDS = 20V, ID = 200 µA
f = 1 kHz
f = 200 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
TA = 125°C
TA = 25°C
to – 55°C
TA = 25°C
to 125°C
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
www.interfet.com

PagesPages 1
Télécharger [ 2N3957 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N3954 N-Channel Dual Silicon Junction Field-Effect Transistor ETC
ETC
2N3954 Low Noise Micross
Micross
2N3954A Low Noise Micross
Micross
2N3955 N-Channel Dual Silicon Junction Field-Effect Transistor ETC
ETC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche