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2N3905 Datasheet دیتاشیت PDF دانلود

دیتاشیت - ON Semiconductor - General Purpose Transistors(PNP Silicon)

شماره قطعه 2N3905
شرح مفصل General Purpose Transistors(PNP Silicon)
تولید کننده ON Semiconductor 
آرم ON Semiconductor 


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2N3905 شرح
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3905/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Power Dissipation @ TA = 60°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
PD
250 mW
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. Indicates Data in addition to JEDEC Requirements.
v v2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
2N3905
2N3906*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
40
5.0
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
1

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