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PDF 3DD13007 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13007 | |
| Descripción | TRANSISTOR | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD13007 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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■ Features
● High Speed Switching
● Suitable for Switching Regulator and Motor Control
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Product specification
3DD13007
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
1
2
2.54+0.2
-0.2
5.08+0.1
-0.1
0.1max
3
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1. BASE
2. COLLECTOR
3. EMITTER
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
700
400
9
8
2
150
-55 to 150
Unit
V
V
V
A
W
℃
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Fall time
Storage time
Transition frequency
Symbol
Testconditons
V(BR)CBO IC = 1mA , IE = 0
V(BR)CEO IC = 10mA , IB = 0
V(BR)EBO IE = 1mA , IC = 0
ICBO VCB = 700V , IE = 0
IEBO VEB=7V,IC=0
VCE = 5V , IC = 2A
hFE
VCE = 5V , IC = 5A
VCE(sat) IC =2A , IB = 0.4A
VBE(sat) IC =2A , IB = 0.4A
Cob VCE=10,IE=0，f=0.1MHz
tf IB1=-IB2=1A, IC=5A, VCC=125V
ts IB1=-IB2=1A, IC=5A, VCC=125V
fT VCE = 10 V , IC = 500 mA , f = 1 MHz
Min Typ Max Unit
700 V
400 V
9V
1 mA
100 μA
8 40
5 30
1V
1.2 V
80 pF
0.7 μs
3 μs
4 MHz
■ hFE Classification
Rank
hFE
8～15 15～20 20～25 25～30 30～35 35～40
http://www.twtysemi.com
4008-318-123
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3DD13007.PDF ] | |
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