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PDF 3DD13001 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13001 | |
| Descripción | NPN Plastic-Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
3DD13001
0.2A , 600V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
CLASSIFICATION OF hFE(1)
Product-Rank
3DD13001-A
Range
17~23
3DD13001-B
20~26
1
Base
3
Emitter
Collector
2
TO-92
AD
B
E CF
GH
1Base
2Collector
3Emitter
J
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F
G
H
J
K
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
600
400
7
0.2
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
600
-
-
V IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 400
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=0.1mA, IC=0
Collector Cut – Off Current
ICBO - - 100 µA VCB=600V, IE=0
ICEO - - 200
VCE=400V, IB=0
Emitter Cut – Off Current
IEBO - - 100 µA VEB=7V, IC=0
DC Current Gain
hFE (1)
17
-
26
hFE (2)
5
-
-
VCE=20V, IC=20mA
VCE=10V, IC=0.25mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
- 0.5 V IC=50mA, IB=10mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- 1.2 V IC=50mA, IB=10mA
Transition Frequency
fT 8 - - MHz VCE=20V, IC=20mA, f =1MHz
Fall time
tF - - 0.3 µs IB1= -IB2=5mA
Storage time
tS - - 1.5 µs VCC=45V, IC=50mA
http://www.SeCoSGmbH.com/
19-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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