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PDF 2N3903 Data sheet ( Hoja de datos )
| Número de pieza | 2N3903 | |
| Descripción | General Purpose Transistors(NPN Silicon) | |
| Fabricantes | ON Semiconductor | |
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2N3903, 2N3904
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
2N
390x
YWWG
G
x = 3 or 4
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 8
1
Publication Order Number:
2N3903/D
1 page  
2N3903, 2N3904
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
10 IC = 1.0 mA
14
12 f = 1.0 kHz IC = 1.0 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA
6 SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
10 IC = 0.5 mA
8
6
4
IC = 50 mA
IC = 100 mA
2 SOURCE RESISTANCE = 500 W
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
f, FREQUENCY (kHz)
Figure 9.
100
2
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
RS, SOURCE RESISTANCE (k OHMS)
Figure 10.
40
100
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
50
200
20
100 10
70 5
50
2
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0
10
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 13. Input Impedance
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N3903.PDF ] | |
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