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2N3866 fiches techniques PDF

Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Numéro de référence 2N3866
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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2N3866 fiche technique
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation
Derate above 25ºC
Value
30
55
3.5
400
5.0
28.6
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1067.PDF 3-10-99

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