|
|
Numéro de référence | 2N3866 | ||
Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | ||
Fabricant | Microsemi Corporation | ||
Logo | |||
1 Page
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
• 800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation
Derate above 25ºC
Value
30
55
3.5
400
5.0
28.6
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1067.PDF 3-10-99
|
|||
Pages | Pages 5 | ||
Télécharger | [ 2N3866 ] |
No | Description détaillée | Fabricant |
2N3863 | Silicon NPN Power Transistor | Inchange Semiconductor |
2N3866 | Silicon planar epitaxial overlay transistors | NXP Semiconductors |
2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation |
2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |