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Microsemi Corporation - NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL

Numéro de référence 2N3838
Description NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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2N3838 fiche technique
TECHNICAL DATA
NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
TRANSISTOR
Qualified per MIL-PRF-19500/421
Devices
2N3838
2N4854
2N4854U
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Sym
2N3838(2)
2N4854, U Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
40
60
5.0
600
One Total
40
60
5.0
600
One Total
Vdc
Vdc
Vdc
mAdc
Trans Devic Trans Device
e
Total Power Dissipation @ TA = +250C
@ TC = + 250C(1)
PT
0.25(2)
0.7(4)
0.35 0.30(3)
1.4 1.0(5)
0.60
2.0
Operating & Storage Junction Temp. Range
TJ
200
Operating & Storage Junction Temp. Range Tstg
-55 to +200
W
W
0C
0C
Lead to Case Voltage
±120
Vdc
1) TC rating do not apply to Surface Mount devices (2N4854U)
2) For TA > +250C Derate linearly 1.43 mW/0C (one transistor) 2.00 mW/0C (both transistors)
3) For TA > +250C Derate linearly 1.71 mW/0C (one transistor) 3.43 mW/0C (both transistors)
4) For TC > +250C Derate linearly 4.0 mW/0C (one transistor) 8.0 mW/0C (both transistors)
5) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors)
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 60 Vdc
Collector-Base Cutoff Current
V(BR)CEO
ICBO(1)
VCB = 50 Vdc
2N3838
2N4854, U
ICBO(2)
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 3.0 Vdc
IEBO
Min.
40
TO-78*
2N4854
6 Pin Surface Mount*
2N4854U
6 Lead Flatpack*
2N3838
*See MILPRF19500/421
for package dimensions.
Max.
Unit
Dc
10 µAdc
50 ηAdc
10
10 µAdc
10 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42103
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