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PDF 2SC5585 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5585 | |
| Descripción | NPN Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SC5585
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
High Current
Low VCE(sat) - VCE(sat)İ250mV at IC = 200mA/IB=10mA
MARKING CODE
BX
S
A
L
3
2 Top View 1
B
3. Collector
2. Base
1. Emitter
G
H
D
C
J
K
SOT-523
Dim Min Max
A 1.50 1.70
B 0.78 0.82
C 0.80 0.82
D 0.28 0.32
G 0.90 1.10
H 0.00 0.10
J 0.10 0.20
K 0.35 0.41
L 0.49 0.51
S 1.50 1.70
All Dimension in mm
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (continuous)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Value
15
12
6
0.5
0.15
-55~+150
-55~+150
Unit
V
V
V
A
W
oC
oC
Electrical Characteristics (Tamb=25 o C unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
DC current gain
IEBO
hFE
Collector-emitter saturation voltage
Transition frequency
Collector Output capacitance
VCE(sat)
fT
Cob
Min.
15
12
6
270
Typ.
320
7.5
Max.
0.1
0.1
680
0.25
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=10 μA, IE=0
IC=1mA, IB=0
IE=10 μA, IC=0
VCB=15V, IE=0
VEB= 6V, IC=0
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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