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Numéro de référence | 2N3822 | ||
Description | N-Channel Silicon Junction Field-Effect Transistor | ||
Fabricant | ETC | ||
Logo | |||
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B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 50 V
10 mA
300 mW
2mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
V(BR)GSS
IGSS
VGS
VGS(OFF)
IDSS
ID(OFF)
2N3821 2N3822
Min Max Min Max Unit
– 50 – 50
– 0.1 – 0.1
– 0.1 – 0.1
– 0.5 – 2
–1 –4
–4 –6
0.5 2.5 2 10
V
nA
µA
V
V
V
V
mA
nA
µA
Process NJ32
Test Conditions
IG = – 1 µA, VDS = ØV
VGS = – 30V, VDS = ØV
VGS = – 30V, VDS = ØV
VDS = 15V, ID = 50 µA
VDS = 15V, ID = 200 µA
VDS = 15V, ID = 400 µA
VDS = 15V, ID = 0.5 nA
VDS = 15V, VGS = ØV
VDS = 15V, VGS = – 8V
VDS = 15V, VGS = – 8V
TA = 150°C
TA = 150°C
rds(on)
gfs
Ω
1500 4500 3000 6500 µS
VGS = ØV, ID = Ø V
VDS = 15V, VGS = ØV
f = 1 kHz
f = 1 kHz
Common Source
Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
| Yfs |
gos
Ciss
Crss
1500 3000
µS
10 20 µS
6 6 pF
2 2 pF
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
VDS = 15V, VGS = ØV
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
e¯N
200 200 nV/√Hz VDS = 15V, VGS = ØV
f = 10 Hz
NF
5
5 dB
VDS = 15V, VGS = ØV
RG = 1 MΩ
f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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Pages | Pages 1 | ||
Télécharger | [ 2N3822 ] |
No | Description détaillée | Fabricant |
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