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PDF 2SC4412 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4412 | |
| Descripción | NPN Triple Diffused Planar Silicon Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor
2SC4412
Features
High breakdown voltage.
Small reverse transfer capacitance and excellent high
frequency characteristic(Cre : 1.0pF typ).
Excellent DC current gain ratio(hFE ratio : 0.95 typ).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
300
300
5
50
100
250
150
-55 to +150
Unit
V
V
V
mA
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Reverse transfer capacitance
DC current gain ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
IcBO VCB = 200V , IE = 0
IEBO VEB = 4V , IC = 0
VCE = 6V , IC = 0.1 mA
hFE
VCE = 6V , IC =1 mA
fT VCE = 30V , IC = 10 mA
Cob VCB = 30V , f = 1MHz
Cre VCB = 30V , f = 1MHz
hFE ratio hFE1/ hFE2
VCE(sat) IC = 10mA , IB = 1mA
VBE(sat) IC = 10mA , IB = 1mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
Min Typ Max Unit
0.1 ìA
0.1 ìA
100 320
100
70 MHz
1.5 pF
1.0 pF
0.95
1.0 V
1.0 V
300 V
300 V
5V
hFE Classification
Marking
QT
Rank
hFE
4
100 200
5
160 320
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC4412.PDF ] | |
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