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Numéro de référence | 2SC4390 | ||
Description | NPN Epitaxial Planar Silicon Transistor | ||
Fabricant | Kexin | ||
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1 Page
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC4390
Features
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=2A).
Low collector-to-emitter saturation voltage
(VCE(sat) 0.3V).
High VEBO (VEBO 15V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
20
10
15
2
4
0.4
500
150
-55 to +150
Unit
V
V
V
A
A
A
mW
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com
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Pages | Pages 2 | ||
Télécharger | [ 2SC4390 ] |
No | Description détaillée | Fabricant |
2SC4390 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
2SC4390 | NPN Epitaxial Planar Silicon Transistor | Kexin |
2SC4391 | Silicon NPN epitaxial planer type(For low-frequency output amplification) | Panasonic Semiconductor |
2SC4391 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
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