DataSheetWiki


2SC4252 fiches techniques PDF

Inchange Semiconductor - Silicon NPN RF Transistor

Numéro de référence 2SC4252
Description Silicon NPN RF Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SC4252 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4252
DESCRIPTION
·High Current-Gain Bandwidth Product
fT = 2.1 GHz TYP.
·Low Output Capacitance-
COB = 1.1 pF TYP.
APPLICATIONS
·Designed for TV tuner ,VHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
3V
IC Collector Current-Continuous
30 mA
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
15 mA
0.1 W
125
-55~125
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

PagesPages 4
Télécharger [ 2SC4252 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC4250 Silicon NPN Epitaxial Planar Type Transistor Toshiba Semiconductor
Toshiba Semiconductor
2SC4250 Silicon NPN RF Transistor Inchange Semiconductor
Inchange Semiconductor
2SC4251 Silicon NPN Epitaxial Planar Type Transistor Toshiba Semiconductor
Toshiba Semiconductor
2SC4251 Silicon NPN RF Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche