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2SC4226 fiches techniques PDF

Renesas - NPN Silicon RF Transistor

Numéro de référence 2SC4226
Description NPN Silicon RF Transistor
Fabricant Renesas 
Logo Renesas 





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2SC4226 fiche technique
PreliminaryData Sheet
2SC4226
NPN Silicon RF Transistor
R09DS0022EJ0200
Rev.2.00
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : S21e2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package
<R> ORDERING INFORMATION
Part Number
2SC4226
2SC4226-T1
Order Number
2SC4226-A
2SC4226-T1-A
Package
3-pin super
Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
20
12
3
100
150
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

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