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PDF 2SC4226 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4226 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SC4226
0.1A , 20V
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
● Low noise
● High gain
● Power dissipation.(PC=150mW)
APPLICATIONS
● High frequency low noise amplifier.
CLASSIFICATION OF hFE
Product-Rank 2SC4226-P
Range
40~80
Marking
r23
2SC4226-Q
70~140
r24
2SC4226-R
125~250
r25
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
SOT-323
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
Collector
Base
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
20
12
3
100
150
+150, -65 ~ +150
Emitter
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Feed Back Capacitance
Noise Figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
fT
Cre
NF
Min.
20
12
3
-
-
40
3.0
-
-
Typ.
-
-
-
-
-
110
4.5
0.7
1.2
Max.
-
-
-
1
1
250
-
1.5
2.5
Unit
V
V
V
A
A
GHz
pF
dB
Testing Condition
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=10V, IE=0
VEB=1V, IC=0
VCE=3V, IC=7mA
VCE=3V, IE=7mA
VCE=3V, IE=0, f=1MHz
VCE=3V, IC=7mA, f=1GHz
24-Feb-2011 Rev. B
Page 1 of 3
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4226.PDF ] | |
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