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Numéro de référence | 2SC4213 | ||
Description | Silicon NPN Epitaxial | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
Silicon NPN Epitaxial
2SC4213
TransistIoCrs
Features
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1Ù (typ.) (IB = 5 mA).
High DC current gain: hFE = 200 1200.
Small package.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
20
25
300
60
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
Testconditons
ICBO VCB = 50 V, IE = 0
IEBO VEB = 25 V, IC = 0
hFE VCE = 2 V, IC = 4 mA
VCE (sat) IC = 30 A, IB = 3 mA
VBE VCE = 2 V, IC = 4 mA
fT VCE = 6 V, IC = 4 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
ton
Storage time
tstg
Fall time
hFE Classification
Marking
hFE
AA
200 700
AB
350 1200
tf
Duty cycle 2%
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
200 1200
0.042 0.1 V
0.61 V
30 MHz
4.8 7 pF
160 ns
500 ns
130 ns
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 1 | ||
Télécharger | [ 2SC4213 ] |
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