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PDF 2SC4179 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4179 | |
| Descripción | NPN Silicon Epitaxia | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
NPN Silicon Epitaxia
2SC4179
TransistIoCrs
Features
High gain bandwidth product.
Low output capacitance.
Low noise figure.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
50
30
5
50
150
150
-55 to +150
Unit
V
V
V
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
Min
ICBO VCB = 50V, IE=0
IEBO VEB = 5V, IC = 0
hFE VCE = 6V , IC = 1.0mA
60
VBE VCE = 6V , IC = 1.0mA
0.65
VCE(sat) IC = 10mA, IB = 1.0mA
fT VCE = 6V, IE = -1.0mA
150
Cob VCE = 6V, IE = 0, f = 1MHz
Cc'rb'b VCB = 6V , IE = -10mA , f = 31.9MHz
NF
VCE = 6V , IE = -1.0mA , Rg = 500Ù, f =
1.0MHz
Typ
100
0.70
0.08
250
1.9
10
2
Max
0.1
0.1
180
0.75
0.3
2.2
15
4
Unit
ìA
ìA
V
V
MHz
pF
ps
dB
hFE Classification
Marking
hFE
FA3
60 120
FA4
90 180
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