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Numéro de référence | 2SC4178 | ||
Description | NPN Silicon Epitaxia | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
NPN Silicon Epitaxia
2SC4178
TransistIoCrs
Features
Micro package.
High gain bandwidth product.
Low output capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
30
20
4
20
150
150
-55 to +150
Unit
V
V
V
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current gain *
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Collector to base time constant
Noise figure
Symbol
Testconditons
Min Typ Max Unit
ICBO VCB = 30V, IE=0
100 nA
hFE VCE = 6V , IC = 1.0mA
40 90 180
VCE(sat) IC = 10mA , IB = 1.0mA
0.1 0.3 V
fT VCE = 6V , IE = -1.0mA
400 600
MHz
Cob VCE = 6V , IE = 0, f = 1MHz
1.0 pF
Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz
12 ps
NF
VCE = 6V , IE = -1.0mA , Rg = 50Ù, f =
100MHz
3
dB
hFE Classification
Marking
hFE
F12
40 80
F13
60 120
F14
90 180
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Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 1 | ||
Télécharger | [ 2SC4178 ] |
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