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2SC4097-Q fiches techniques PDF

MCC - NPN Silicon Epitaxial Transistors

Numéro de référence 2SC4097-Q
Description NPN Silicon Epitaxial Transistors
Fabricant MCC 
Logo MCC 





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2SC4097-Q fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SC4097-P
2SC4097-Q
2SC4097-R
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High Icmax. Icmax=0.5A
Low VCE(SAT). Optimal for low voltage operation.
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ, TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
32
40
5
500
200
-55 to +150
Unit
V
V
V
mA
mW
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
V(BR)CBO
Collector -base breakdown voltage
(IC=100µA, IE= 0)
40
V
V(BR)CEO
Collector-emitter breakdown voltage
(IC=-1mA, IB= 0)
32
V
V(BR)EBO
Emitter-base breakdown voltage
(IE=100µA, Ic= 0)
5
V
ICBO
Collector cut-off current
(VCB=20V,IE=0)
1 µA
IEBO
Emitter cut-off current
(VEB=4V, Ic= 0)
1 µA
hFE
DC Current Gain
(VCE=3V,IC=10mA)
82
390
VCE(sat)
Collector-emitter saturation voltage
(IC=100mA, IB=10mA)
0.4 V
Cob
Collector Output Capacitance
(VCB=10V, IE=0, f=1.0MHz)
6 pF
fT
Transition frequency
(VCE=5V, Ic=20mA,f=100MHz)
250 MHz
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
BC
FE
BE
G HJ
K
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30 .40
.000
.100
.90 1.00
.100
.250
.30 .40
Suggested Solder
Pad Layout
0.70
NOTE
hFE CLASSIFICATION
Rank
Ramge
Marking
P
82~180
CP
Q
120~270
CQ
R
180~390
CR
0.90
1.90 mm
0.65
0.65
Revision: A
www.mccsemi.com
1 of 3
2011/01/01Free Datasheet http://www.datasheet4u.com/

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