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PDF 2SC3837K Data sheet ( Hoja de datos )
| Número de pieza | 2SC3837K | |
| Descripción | Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Power Transistor
2SC3837K
Features
High transition frequency. (Typ. fT = 1.5GHz)
Small rbb'.Cc and high gain. (Typ. 6ps)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Collector-base time constant
Noise factor
Output capacitance *
Transition frequency
* Measured using pulse current.
hFE Classification
Marking
Rank
hFE
ACN
N
56 120
ACP
P
82 180
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
30
18
3
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
1.Base
2.Emitter
3.collector
Symbol
Testconditons
VCBO IC=10ìA
VCEO IC=1mA
VEBO IE=10ìA
ICBO VCB=20V
IEBO VEB=10V
VCE(sat) IC/IB=20mA/4mA
hFE VCE=10V, IC=10mA
rbb'.Cc VCB = 10V , IC = 10mA , f = 31.8MHz
NF VCE=12V,IC=2mA,f=200MHz,Rg=50
Cob VCB=10V, IE=0, f=1MHz
fT VCE=10V, IE= 10mA, f=200MHz
Min Typ Max Unit
30 V
18 V
3V
0.5 A
0.5 A
0.5 V
56 180
6 13 ps
4.5 dB
0.9 1.5 pF
600 1500
MHz
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