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PDF 2SC380TM Data sheet ( Hoja de datos )
| Número de pieza | 2SC380TM | |
| Descripción | NPN Plastic-Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SC380TM
0.05A , 35V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Frequency Amplifier Applications
CLASSIFICATION OF hFE
Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y
Range
40~80
70~140
120~240
Marking
R
O
Y
TO-92
GH
J
AD
B
K
E CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
4.40
4.30
Max.
4.70
4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
35
30
4
50
300
416
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Min.
35
30
4
-
-
40
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
240
0.4
1
-
3.2
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Condition
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
11-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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