2SC3583 Datasheet PDF - Kexin
| Part Number | 2SC3583 | |
| Description | NPN Silicon Epitaxial Transistor | |
| Manufacturers | Kexin | |
| Logo |  |
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SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC3583
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
NF 1.2 dB TYP. @f = 1.0 GHz
Ga 13 dB TYP. @f = 1.0 GHz
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Rating
20
10
1.5
65
200
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *1
Gain bandwidth product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
*1.Pulse Measurement PW
Symbol
ICBO
IEBO
hFE
fT
Cre *2
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MAG
NF
350ìs, Duty Cycle 2 %
Testconditons
VCB = 10 V, IE = 0
VEB = 1 V, IE = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
Min Typ Max Unit
1.0 ìA
1.0 ìA
50 100 250
9 GHz
0.35 0.9 pF
11 13
dB
15 dB
1.2 2.5 dB
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Marking
Rank
hFE
R33
R33/Q
50 100
R34
R34/R
80 160
R35
R35/S
125 250
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC3583 electronic component. |
| Information | Total 1 Pages | |
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| Download | [ 2SC3583.PDF Datasheet ] | |
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