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Numéro de référence | 2SC3545 | ||
Description | NPN Silicon Epitaxial Transistor | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC3545
Features
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP.
Low Collector to Base Time Constant; CC rb’b = 4 ps TYP.
Low Feedback Capacitance; Cre = 0.48 pF TYP.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
30
15
3.0
50
150
125
-65 to +125
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constant
Symbol
Testconditons
ICBO VCB = 12 V, IE = 0
hFE VCE = 10 V, IC = 5.0 mA
VCE(sat) IC = 10 mA, IB = 1.0 mA
fT VCE = 10 V, IE =-5.0 mA
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
CC. rb’b VCE = 10 V, IE = -5.0 mA, f = 31.9 MHz
Min
50
1.3
Typ
100
2.0
0.48
4
Max Unit
0.1 ìA
250
0.5 V
MHz
1.0 pF
1.0 ps
hFE Classification
Marking
T42
Rank
M/P
hFE 50 100
T43
L/Q
70 140
T44
K/R
120 250
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 1 | ||
Télécharger | [ 2SC3545 ] |
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