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2SC3448 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC3448
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3448 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3448
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800 V
VCEO
Collector-Emitter Voltage
500 V
VEBO
Emitter-Base voltage
7V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
8A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
60 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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