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2SC3405 fiches techniques PDF

Kexin - NPN Silicon Triple Diffused Transistor

Numéro de référence 2SC3405
Description NPN Silicon Triple Diffused Transistor
Fabricant Kexin 
Logo Kexin 





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2SC3405 fiche technique
SMD Type
Transistors
NPN Silicon Triple Diffused Transistor
2SC3405
Features
Excellent Switching Times
tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A
High colletor Breakdown Voltage: VCEO=800V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base Current
Total Power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
Icp
IB
PC
Tj
Tstg
Rating
900
800
8
0.8
1.5
0.2
1
20
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Symbol
ICBO
IEBO
V(BR)EBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
Testconditons
VCB=800V,IE=0
VEB=8V,IC=0
IE=1mA,IC=0
IC=10mA,IB=0
VCE=5V,IC=1mA
VCE=5V,IC=0.3A
IC=0.3A,IB=0.06A
IC=0.3A,IB=0.06A
Min Typ Max Unit
100 ìA
1 mA
900 V
800 V
6
10
0.5 V
1.2 V
Switching time turn-0n time
tr
1 ìs
Switching storage time
tstg
4.0 ìs
Switching fall time
tf
1 ìs
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/

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