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Número de pieza | 2SC3365 | |
Descripción | Silicon NPN Triple Diffused | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3365 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/
1 page Maximum Collector Dissipation Curve
120
80
40
0 50 100 150
Case Temperature TC (°C)
Collector Current Derating Rate
100
80
60
IS/B Limit Area
40
20
0 50 100 150
Case temperature TC (°C)
2SC3365
Area of Safe Operation
100
30 iC (peak)
10
IC (max)
3 (Continuous)
1.0
0.3
0.1
0.03
0.01 Ta = 25°C, 1 Shot Pulse
1 3 10 30 100 300 1,000
Collector to emitter Voltage VCE (V)
Transient Thermal Resistance
10
3
10 ms–10 s
1.0
0.3
0.1
0.03
0.01
0.01
0.01
10 µs–10 ms
TC = 25°C
0.1 1.0 10 (s)
0.1 1.0
Time t
10 (ms)
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SC3365.PDF ] |
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