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PDF 2SC3360 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3360 | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC3360
Features
High DC current gain.hFE=90 to 450
High voltage VCEO=200V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
200
200
5
100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
* Pulse test: tp 350 ìs; d 0.02.
hFE Classification
Marking
hFE
N15
90 180
N16
135 270
Symbol
Testconditons
ICBO VCB = 200V, IE=0
IEBO VEB = 5V, IC=0
VCE =10V , IC = 10mA
hFE
VCE =10V , IC = 50mA
VBE VCE =10V , IC = 10mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 10V , IE = -10mA
Cob VCB = 30V , IE = 0 , f = 1.0MHz
ton IC = 10mA, IB1 = -IB2 = 1mA,
tstg VCC = 10 V
tf VBE(off) = -2.5V
N17
200 450
1.Base
2.Emitter
3.collector
Min Typ Max Unit
100 nA
100 nA
90 200 450
50 200
0.6 0.64 0.7 V
0.1 0.3 V
0.8 1.2 V
160 MHz
2.8 pF
0.15 ìs
1.3 ìs
0.3 ìs
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| PDF Descargar | [ Datasheet 2SC3360.PDF ] | |
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