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PDF 2SC3357 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3357 | |
| Descripción | NPN EPITAXIAL SILICON RF TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC3357 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Free Datasheet http://www.datasheet4u.com/
1 page  
2SC3357
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
Ceramic substrate
16 cm2 × 0.7 mm (t)
1
Free air Rth (j-a) 312.5˚C/W
1
0.5
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
Collector Current IC (mA)
50
INSERTION POWER GAIN, MAG
vs. FREQUENCY
25
MAG
20
|S21e|2
15
0.3
0.2
0.5 1 2
5 10 20 30
Collector to Base Voltage VCB (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 10 V
5
3
2
1
0.5
0.3
0.2
0.1
0.1
0.5 1
5 10
Collector Current IC (mA)
50 100
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
VCE = 10 V
f = 1 GHz
10
10
5
VCE = 10 V
IC = 20 mA
0
0.05 0.1
0.2
0.5
Frequency f (GHz)
1
2
5
0
0.5 1
5 10
Collector Current IC (mA)
50 70
Data Sheet PU10211EJ01V0DS
3
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SC3357.PDF ] | |
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