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PDF 2SC3357 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3357 | |
| Descripción | Silicon NPN RF Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3357
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP.
@VCE = 10 V, IC = 40 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
12 V
3.0 V
0.1 A
1.2 W
150 ℃
-65~150
℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3357
VCE = 10 V, IC = 20 mA, ZO = 50Ω
f (MHz)
︱S11︱
∠S11
200
0.130
-109.2
400
0.073
-134.1
600
0.037
-146.6
800
0.010
177.1
1000
0.024
23.7
1200
0.056
17.2
1400
0.093
13.8
1600
0.124
12.0
1800
0.151
11.0
2000
0.174
13.4
︱S21︱
13.430
6.930
4.690
3.560
2.878
2.439
2.133
1.898
1.693
1.591
∠S21
98.1
87.2
79.4
75.2
68.2
65.4
59.0
57.3
52.9
52.0
︱S12︱
0.042
0.081
0.119
0.154
0.191
0.220
0.257
0.280
0.311
0.341
∠S12
79.0
80.6
79.4
79.7
76.5
76.8
72.9
74.0
72.4
72.8
︱S22︱
0.403
0.382
0.392
0.412
0.440
0.463
0.483
0.504
0.519
0.542
∠S22
-22.1
-24.7
-25.6
-27.1
-31.9
-32.3
-35.7
-35.3
-38.4
-36.3
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC3357.PDF ] | |
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