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Numéro de référence | 2SC3356 | ||
Description | High-Frequency Amplifier Transistor NPN Silicon | ||
Fabricant | Weitron | ||
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1 Page
2SC3356
High-Frequency Amplifier Transistor
NPN Silicon
P b Lead(Pb)-Free
FEATURES
* Low noise amplifier at VHF, UHF and CATV band.
* Low Noise and High Gain
* High Power Gain
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3
0.1
0.25
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Noise figure
Symbol
Test conditions
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC= 1mA, IB=0
VCE(sat) IC= 50mA, IB=5mA
ICBO
VCB=10V, IE=0
IEBO
VEB=1V, IC=0
hFE* VCE=3V, IC= 10mA
fT VCE=10V, IC= 20mA
NF VCE=10V, IC= 7mA, f = 1GHz
MIN
20
12
82
TYP MAX UNIT
V
V
200 mV
1 μA
1 μA
270
7 GHz
2 dB
*pulse test: pulse width≤350μs, Duty cycle≤2%
WEITRON
http://www.weitron.com.tw
1/3
Rev.B 25-Feb-09
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 3 | ||
Télécharger | [ 2SC3356 ] |
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