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Numéro de référence | 2SC3356 | ||
Description | Silicon NPN RF Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3356
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
·High Power Gain
MAG = 13 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
3.0 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.1 A
0.2 W
150 ℃
-65~150
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 5 | ||
Télécharger | [ 2SC3356 ] |
No | Description détaillée | Fabricant |
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2SC3353 | Power Transistor | Inchange Semiconductor |
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