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2SC3356 fiches techniques PDF

Inchange Semiconductor - Silicon NPN RF Transistor

Numéro de référence 2SC3356
Description Silicon NPN RF Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3356 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3356
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
·High Power Gain
MAG = 13 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
3.0 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
0.1 A
0.2 W
150
-65~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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