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Número de pieza | 2SC3355 | |
Descripción | Silicon NPN RF Transistor | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3355 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3355
DESCRIPTION
·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP.
@VCE = 10 V, IC = 40 mA, f = 1.0 GHz
·High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
3.0 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.1 A
0.6 W
150 ℃
-65~150
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
1 page INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3355
VCE = 10 V, IC = 40 mA, ZO = 50Ω
f (MHz)
︱S11︱
∠S11
200
0.011
-60.1
400
0.028
-42.9
600
0.027
25.1
800
0.043
65.7
1000
0.074
75.1
1200
0.098
75.6
1400
0.120
74.1
1600
0.146
75.8
1800
0.171
77.2
2000
0.205
78.0
︱S21︱
13.76
7.338
4.996
3.801
3.134
2.759
2.351
2.203
1.910
1.825
∠S21
105.4
82.9
72.7
61.9
57.6
52.4
44.4
36.0
29.9
21.3
︱S12︱
0.040
0.069
0.114
0.144
0.183
0.221
0.247
0.291
0.299
0.344
∠S12
-73.3
66.7
69.4
67.8
63.4
62.1
55.7
49.6
46.0
39.4
︱S22︱
0.421
0.416
0.414
0.406
0.386
0.373
0.356
0.347
0.342
0.335
∠S22
-17.5
-22.8
-28.7
-35.7
-41.8
-49.8
-56.3
-66.6
-78.8
-89.6
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SC3355.PDF ] |
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