DataSheetWiki


2SC3322 fiches techniques PDF

Hitachi - Silicon NPN Triple Diffused

Numéro de référence 2SC3322
Description Silicon NPN Triple Diffused
Fabricant Hitachi 
Logo Hitachi 





1 Page

No Preview Available !





2SC3322 fiche technique
2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
IB
PC*1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
900
800
7
5
10
2.5
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Free Datasheet http://www.datasheet4u.com/

PagesPages 7
Télécharger [ 2SC3322 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3320 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING Fuji Electric
Fuji Electric
2SC3320 HIGH VOLTAGE HIGH SPEED SWITCHING Unisonic Technologies
Unisonic Technologies
2SC3320 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SC3320B Silicon NPN triple diffusion planar transistor(High voltage switching transistor) NELL SEMICONDUCTOR
NELL SEMICONDUCTOR

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche