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Numéro de référence | 2SC3322 | ||
Description | Silicon NPN Triple Diffused | ||
Fabricant | Hitachi | ||
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1 Page
2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
IB
PC*1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
900
800
7
5
10
2.5
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 7 | ||
Télécharger | [ 2SC3322 ] |
No | Description détaillée | Fabricant |
2SC3320 | TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING | Fuji Electric |
2SC3320 | HIGH VOLTAGE HIGH SPEED SWITCHING | Unisonic Technologies |
2SC3320 | SILICON POWER TRANSISTOR | SavantIC |
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