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2SC3123 fiches techniques PDF

Inchange Semiconductor - Silicon NPN RF Transistor

Numéro de référence 2SC3123
Description Silicon NPN RF Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC3123 fiche technique
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3123
DESCRIPTION
·High Conversion Gain
Gce = 23dB TYP.
·Low Reverse Transfer Capacitance
Cre = 0.4pF TYP.
APPLICATIONS
·Designed for TV VHF mixer applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
20 V
VEBO Emitter-Base Voltage
3V
IC Collector Current-Continuous
50 mA
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
25 mA
0.15 W
125
-55~125
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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