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Numéro de référence | 2SC2883 | ||
Description | TRANSISTOR | ||
Fabricant | Jin Yu Semiconductor | ||
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1 Page
2SC2883
TRANSISTOR (NPN)
FEATURES
Low voltage
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
ICBO
VCB=30V,IE=0
IEBO VEB=5V,IC=0
hFE VCE=2V,IC=0.5A
VCE(sat) IC=1.5A,IB=30mA
VBE VCE=2V,IC=0.5A
fT VCE=2V,IC=500mA
Cob VCB=10V,IE=0,f=1MHz
MIN
30
30
5
100
TYP
120
MAX UNIT
V
V
V
0.1 μA
0.1 μA
320
2V
1V
MHz
40 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
GO
Y
160-320
GY
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 3 | ||
Télécharger | [ 2SC2883 ] |
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