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2SC2716 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC2716
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC2716 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2716
DESCRIPTION
·High Power Gain-
: Gp12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
80 V
VCEO Collector-Emitter Voltage
30 V
VEBO Emitter-Base Voltage
5V
ICM Collector Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20
W
1.7
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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