|
|
PDF 2SC2715M Data sheet ( Hoja de datos )
| Número de pieza | 2SC2715M | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC2715M (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
2SC2715M TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
High power gain: Gpe=27dB(f=10.7MHz)
Recommended for FM IF,OSC Stage and AM CONV.IF Stage
APPLICATION
High Frequency amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
C
BE
1. BASE
C
2. EMITTER
C
3. COLLECTOR BACK
EB
MARKING: RR,RO,RY
C
RR
BE
AXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ Junction Temperature
Tstg Storage Temperature
Value
35
30
4
50
150
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Units
V
V
V
mA
mW
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector- Base time constant
Power Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Cc.rbb’
Gp
Test conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=35V, IE=0
VEB=4V, IC=0
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHZ
VCE=10V, IC=1mA, f=30MHZ
VCE=6V, IC=1mA, f=10.7MHZ
MIN TYP MAX UNIT
35 V
30 V
4V
0.1 µA
0.1 µA
40 240
0.4 V
1V
100 400 MHz
3.2 pF
50 ps
27 33 dB
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2715M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC2715 | Silicon NPN Epitaxial Planar Type Transistor |  Toshiba Semiconductor |
| 2SC2715 | Silicon Epitaxial Planar Transistor |  Galaxy Semi-Conductor |
| 2SC2715 | Silicon NPN Epitaxial |  Kexin |
| 2SC2715 | NPN Plastic-Encapsulate Transistor |  SeCoS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |