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Numéro de référence | 2SC2462 | ||
Description | Silicon NPN Epitaxial | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
TransistIoCrs
Features
Low frequency amplifier.
Silicon NPN Epitaxial
2SC2462
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Base-emitter voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
40
5
100
150
150
-55 to +150
Unit
V
V
V
mA
mW
Symbol
Testconditons
VCBO IC = 10ìA , IE = 0
VCEO IC = 1mA , RBE =
VEBO IE = 10ìA , IC = 0
VBE VCE = 12V , IC = 2mA
ICBO VCB = 30V, IE=0
IEBO VEB = 2V, IC=0
hFE VCE = 12V , IC = 2mA
VCE(sat) IC = 10mA , IB = 1mA
Min Typ Max Unit
50 V
40 V
5V
0.75 V
0.5 A
0.5 A
100 500
0.2 V
hFE Classification
Marking
Rank
hFE
LB
B
100 200
LC
C
160 320
LD
D
250 500
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ 2SC2462 ] |
No | Description détaillée | Fabricant |
2SC2460 | SILICON POWER TRANSISTOR | SavantIC |
2SC2461A | SILICON NPN EPITAXIAL TYPE | Toshiba |
2SC2462 | Silicon NPN Epitaxial | Hitachi Semiconductor |
2SC2462 | Silicon NPN Epitaxial | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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