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2SC2414 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC2414
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC2414 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2414
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
APPLICATIONS
·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
4A
70 W
150
-65~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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