2SC2412 Datasheet PDF - SeCoS
| Part Number | 2SC2412 | |
| Description | NPN Silicon General Purpose Transistor | |
| Manufacturers | SeCoS | |
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Elektronische Bauelemente
2SC2412
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n Low Cob.
n Cob=2.0pF
n Compements the 2SA1037K
n RoHS Compliant Product
STRUCTURE
n Expitaxial planar type
n NPN Silicon Teansistor
A
L
3
Top View
12
VG
BS
C
D HK
J
Collector
Base
Emitter
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
!Absolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
7
0.15
0.2
150
−55~+150
Unit
V
V
V
A
W
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Output capacitance
Cob
60
50
7
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
hFE values are classified as follows :
Item
Q
R
hFE
Ma rking
120~270
BQ
180~390
BR
S
270~560
BS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC2412 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2SC2412.PDF Datasheet ] | |
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