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Numéro de référence | 2SC2411 | ||
Description | TRANSISOR | ||
Fabricant | Jin Yu Semiconductor | ||
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1 Page
2SC2411
TRANSISOR(NPN)
SOT-23
FEATURES
z High ICMax.ICMax. = 0.5mA
z Low VCE(sat).Optimal for low voltage operation.
z Complements the 2SA1036
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5V
IC Collector Current
500 mA
PC
Collector Power Dissipation
200
mW
TJ Junction Temperature 150 ℃
Tstg
Storage Temperature
-55-150
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
Collector cut-off current
Emitter cut-off current
ICBO VCB=20V,IE=0
IEBO VEB=4V,IC=0
DC current gain
hFE VCE=3V,IC=100mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=500mA,IB=50mA
VCE=5V,IC=20mA,f=100MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
MIN
40
32
5
82
TYP
250
6.0
MAX UNIT
V
V
V
1 μA
1 μA
390
0.4 V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ 2SC2411 ] |
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