DataSheetWiki


2SC1623W fiches techniques PDF

Galaxy Semi-Conductor - NPN Silicon Epitaxial Planar Transistor

Numéro de référence 2SC1623W
Description NPN Silicon Epitaxial Planar Transistor
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





1 Page

No Preview Available !





2SC1623W fiche technique
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain: hFE=200TYP.
z High voltage: VCEO=50V.
z Power dissipation.(PC=200mW)
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier.
Production specification
2SC1623W
ORDERING INFORMATION
Type No.
Marking
2SC1623W
L4/L5/L6/L7
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
100
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
Document number: BL/SSSTF035
Rev.A
www.galaxycn.com
1
Free Datasheet http://www.datasheet4u.com/

PagesPages 4
Télécharger [ 2SC1623W ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD NEC
NEC
2SC1623 NPN Silicon Epitaxial Transistors MCC
MCC
2SC1623 NPN General Purpose Transistors Weitron Technology
Weitron Technology
2SC1623 Plastic-Encapsulate Transistors TRANSYS
TRANSYS

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche