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PDF 2SC1622A Data sheet ( Hoja de datos )
| Número de pieza | 2SC1622A | |
| Descripción | NPN Silicon Epitaxial Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Features
High DC current gain.
NPN Silicon Epitaxial Transistor
2SC1622A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Rating
120
120
5
50
200
150
-55 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = 120V, IE=0
IEBO VEB = 5V, IC=0
VCE =6V , IC = 1mA
hFE
VCE =6V , IC = 0.1mA
VCE(sat) IC = 10mA , IB = 1mA
VBE VCE = 6V , IC = 1mA
fT VCE = 6V , IE = -1mA
Cob VCB = 30V , IE = 0 , f = 1.0MHz
hFE Classification
Marking
hFE
D15
135 270
D16
200 400
D17
300 600
D18
450 900
Min
135
100
0.55
50
Typ
500
0.07
0.58
110
1.6
Max
0.05
0.05
900
0.30
0.65
2.5
Unit
ìA
ìA
V
V
MHz
pF
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| PDF Descargar | [ Datasheet 2SC1622A.PDF ] | |
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