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PDF 2SB766 Data sheet ( Hoja de datos )
| Número de pieza | 2SB766 | |
| Descripción | PNP Silicon Medium Power Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SB766
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
SOT-89
D
D1
A
FEATURES
Power dissipation
P CM : 500mW˄Tamb=25ć˅
Collector current
ICM : -1 A
Collector-base voltage
1.BASE
2.COLLECTOR
3.EMITTER
VB(BR)CBO : -30
V
Operating and storage junction temperature range
TJˈTstg: -55ć to +150ć
b1
e
e1
b
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min Max
1.400 1.600
0.320 0.520
0.360 0.560
0.350 0.440
4.400 4.600
1.400 1.800
2.300 2.600
3.940 4.250
1.500TYP
2.900 3.100
0.900 1.100
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅
C
Dimensions In Inches
Min Max
0.055 0.063
0.013 0.020
0.014 0.022
0.014 0.017
0.173 0.181
0.055 0.071
0.091 0.102
0.155 0.167
0.060TYP
0.114 0.122
0.035 0.043
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Ic=-10PA, IE=0
Ic=-2mA, IB=0
IE=-10PA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
-30 V
-25 V
-5 V
-0.1 PA
-0.1 PA
85 340
50
-0.2 -0.4 V
-0.85 -1.2 V
200 MHz
20 30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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