DataSheetWiki


2SB1623A fiches techniques PDF

Panasonic - Silicon PNP Epitaxial Transistor

Numéro de référence 2SB1623A
Description Silicon PNP Epitaxial Transistor
Fabricant Panasonic 
Logo Panasonic 





1 Page

No Preview Available !





2SB1623A fiche technique
Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
For power amplification
Features
High forward current transfer ratio hFE
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: > 5 kV
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
PC
80
80
5
4
8
40
2.0
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
VBE
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCE = −3 V, IC = −3 A
VCB = −80 V, IE = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −3 V, IC = − 0.5 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
VCC = −50 V
80
1 000
1 000
V
2.5 V
200 µA
500 µA
2 mA
10 000
2 V
4
20 MHz
0.3 µs
2.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: January 2003
SJD00301AED
1
Free Datasheet http://www.datasheet4u.com/

PagesPages 3
Télécharger [ 2SB1623A ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB1623 Silicon PNP epitaxial planer type(For power amplification) Panasonic Semiconductor
Panasonic Semiconductor
2SB1623A Silicon PNP Epitaxial Transistor Panasonic
Panasonic

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche