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PDF 2SB1527 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1527 | |
| Descripción | PNP Epitaxial Planar Silicon Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SB1527
Features
Low saturation voltage.
Contains a diode between collector and emitter.
Contains a bias resistor between base and emitter.
Large current capacity.
Compact package making it easy to realize highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
-20
-15
-5
-0.8
-2
200
150
-55 to +150
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit
V
V
V
A
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Marking
Marking
NS
Symbol
Testconditons
ICBO VCB = -15V , IE = 0
hFE VCE = -2V , IC = -0.5A
fT VCE = -2V , IC = -0.5A
Cob VCB = -10V , f = 1MHz
VCE(sat) IC = -500mA , IB = -10mA
VBE(sat) IC = -500mA , IB = -10mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
VF IF=-0.5A
RBE
Min Typ Max Unit
-1 ìA
70
250 MHz
30 pF
-0.2 -0.4 V
-.095 -1.3 V
-20 V
-15 V
-1.5 V
1 KÙ
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1527.PDF ] | |
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