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PDF 2SB1424 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1424 | |
| Descripción | PNP Silicon Medium Power Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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1. 2SB1424  Hay una vista previa y un enlace de descarga de 2SB1424 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Elektronische Bauelemente
2SB1424
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
D
D1
A
SOT-89
1.BASE
2.COLLECTOR
3. EMITTER
FEATURES
Power dissipation
PCM : 600 mW Temp.=25
Collector current
ICM : -3 A
Collector-base voltage
V(BR)CBO : -20
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
b1
e
e1
b
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min Max
1.400 1.600
0.320 0.520
0.360 0.560
0.350 0.440
4.400 4.600
1.400 1.800
2.300 2.600
3.940 4.250
1.500TYP
2.900 3.100
0.900 1.100
C
Dimensions In Inches
Min Max
0.055 0.063
0.013 0.020
0.014 0.022
0.014 0.017
0.173 0.181
0.055 0.071
0.091 0.102
0.155 0.167
0.060TYP
0.114 0.122
0.035 0.043
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=-50 A,IE=0
-20
Collector-emitter breakdown voltage
V(BR)CEO Ic=-1mA,IB=0
-20
Emitter-base breakdown voltage
V(BR)EBO IE=-50 A,IC=0
-6
Collector cut-off current
ICBO VCB=-20V,IE=0
Emitter cut-off current
IEBO VEB=-5V,IC=0
DC current gain
hFE(1) VCE=-2V,IC=-100mA
120
Collector-emitter saturation voltage
VCE(sat) IC=-2A,IB=-100mA
Transition frequency
fT VCE=-2V,IC=-500mA,f=100MHz
240
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
35
MAX UNIT
V
V
V
-0.1 A
-0.1 A
390
-0.5 V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q
120-270
AEQ
R
180-390
AER
Any changing of specification will not be informed individual
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1424.PDF ] | |
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